| PART |
Description |
Maker |
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2N3440S |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
|
SEME-LAB[Seme LAB]
|
| XR2206 XR-2206P XR-2206D XR-2206CP XR-2206M XR2206 |
Monolithic Function Generator
WAVEFORM GENERATOR/SUPPORT,BIPOLAR,DIP,16PIN,PLASTIC
WAVEFORM GENERATOR/SUPPORT,BIPOLAR,SOP,16PIN,PLASTIC
WAVEFORM GENERATOR/SUPPORT,BIPOLAR,DIP,16PIN,CERAMIC
From old datasheet system
|
EXAR[Exar Corporation]
|
| 2SC4800 2SC4801 2SC4802 2SC4803 2SC2820 2SD476 2SD |
Power Bipolar Transistors 功率双极晶体
(2SC4800 - 2SC4803) Power Bipolar Transistors
|
List of Unclassifed Manufac...
http://
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
Toshiba Semiconductor
ETC[ETC]
List of Unclassifed Man...
|
| 2N2890 |
Bipolar NPN Device in a Hermetically sealed TO39
Bipolar NPN Device.
|
Seme LAB
SEMELAB
|
| 2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor
-1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
| CA329004 CA3290E CA3290 CA3290A CA3290AE |
Comparator, BiMOS, Dual, MOSFET Inputs, Bipolar Outputs, Improved Input Characteristics
BiMOS Dual Voltage Comparators with MOSFET Input, Bipolar Output
|
INTERSIL[Intersil Corporation]
|
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| SL5067KGMPES SL5067KGDPAS |
RF MODULATOR,BIPOLAR,SOP,20PIN,PLASTIC
RF MODULATOR,BIPOLAR,DIP,20PIN,PLASTIC
From old datasheet system
|
GEC Plessey Semiconductors
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
